2SB722 Datasheet PDF - SavantIC

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2SB722
SavantIC

Part Number 2SB722
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SB722
DESCRIPTION
·With TO-3 package
·High current capability
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
IB
PC
Tj
Emitter-base voltage
Open collector
Collector current
Base current
Collector power dissipation TC=25
Junction temperature
Tstg Storage temperature
VALUE
-160
-160
-5
-15
-4
150
150
-55~200
UNIT
V
V
V
A
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
VBE Base-emitter on voltage
ICBO Collector cut-off current
IC=-2A ; VCE=-5V
VCB=-160V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-5V
Product Specification
2SB722
MIN TYP. MAX UNIT
-160
V
-160
V
-5 V
-3.0 V
-1.5 V
-0.1 mA
-0.1 mA
50
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB722
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3



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