2SB655 Datasheet PDF - SavantIC

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2SB655
SavantIC

Part Number 2SB655
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SB655
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-160
-6
-12
-20
100
150
-40~150
UNIT
V
V
V
A
A
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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
V(BR)CBO Collector-emitter breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
IC=-1A ; VCE=-5V
VCB=-120V; IE=0
VEB=-4V; IC=0
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
Product Specification
2SB655
MIN TYP. MAX UNIT
-160
V
-160
V
-6 V
-2.5 V
-1.5 V
-0.1 mA
-0.1 mA
35 200
20
20 MHz
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB655
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3



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