2SB653 Datasheet PDF - SavantIC

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2SB653
SavantIC

Part Number 2SB653
Description SILICON POWER TRANSISTOR
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SB653
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-6
-7
60
150
-55~150
UNIT
V
V
V
A
W



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SB653
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
-120
V
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-120
-6
V
V
-1.5 V
ICBO Collector cut-off current
VCB=-120V; IE=0
-0.1 mA
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
VEB=-6V; IC=0
IC=-1A ; VCE=-5V
IC=-1A ; VCE=-5V
-0.1 mA
35 200
20 MHz
2



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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB653
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3



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