2SA1036K Datasheet PDF - LGE

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2SA1036K
LGE

Part Number 2SA1036K
Description NPN Transistor
Page 2 Pages


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1. BASE
2. EMITTER
3. COLLECTOR
2SA1036K
SOT-23-3L Transistor(PNP)
SOT-23-3L
2.92
0.35
1.17
Features
— Large IC. IC= -500 mA
— Low VCE(sat). Ideal for low-voltage operation.
MARKING : HP, HQ, HR
2.80
1.60
0.15
1.90
MAXIMUM RATINGS (TA=25unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-500
200
150
-55-150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-100μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100μA,IC=0
ICBO VCB=-20V,IE=0
IEBO VEB=-4V,IC=0
hFE VCE=-3V,IC=-10mA
VCE(sat) IC=-100mA,IB=-10mA
fT VCE=-5V,IC=-20mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
MIN TYP MAX UNIT
-40 V
-32 V
-5 V
-1 μA
-1 μA
82 390
-0.4 V
200 MHz
7 pF
CLASSIFICATION OF hFE
Rank
Range
P
82 - 180
Q
120 - 270
R
180 - 390



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Typical Characteristics
2SA1036K
SOT-23-3L Transistor(PNP)



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