2N7002CK Datasheet PDF - NXP

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2N7002CK
NXP

Part Number 2N7002CK
Description 0.3 A N-channel Trench MOSFET
Page 13 Pages


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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
I Logic-level compatible
I Very fast switching
I Trench MOSFET technology
I ESD protection up to 3 kV
1.3 Applications
I Relay driver
I High-speed line driver
I Low-side loadswitch
I Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
IDM
Quick reference data
Parameter
drain-source voltage
drain current
peak drain current
RDSon
drain-source on-state
resistance
Conditions
single pulse;
tp 10 µs
VGS = 10 V;
ID = 500 mA
Min Typ Max Unit
- - 60 V
- - 300 mA
- - 1.2 A
- 1.1 1.6



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2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
2N7002CKwww.DataSheet4U.com
60 V, 0.3 A N-channel Trench MOSFET
Simplified outline Graphic symbol
3D
1 2G
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N7002CK TO-236AB plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
2N7002CK
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
LP*
S
017aaa000
Version
SOT23
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
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2N7002CKwww.DataSheet4U.com
60 V, 0.3 A N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
25 °C Tj 150 °C
VGS = 10 V
Tamb = 25 °C
Tamb = 100 °C
Tamb = 25 °C; tp 10 µs
Tamb = 25 °C
-
-
-
-
-
[1] -
55
65
IS source current
ISM peak source current
ElectroStatic Discharge (ESD)
Tamb = 25 °C
Tamb = 25 °C; tp 10 µs
-
-
VESD
electrostatic discharge
voltage
all pins;
human body model;
C = 100 pF;
R = 1.5 k
-
Max Unit
60 V
±20 V
300
190
1.2
350
150
+150
+150
mA
mA
A
mW
°C
°C
°C
200 mA
1.2 A
3 kV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
120
Pder
(%)
80
017aaa001
120
Ider
(%)
80
017aaa002
40 40
0
75
25
25
75 125 175
Tamb (°C)
0
75
25
25
75 125 175
Tamb (°C)
Fig 1.
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Normalized continuous drain current as a
function of ambient temperature
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
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2N7002CKwww.DataSheet4U.com
60 V, 0.3 A N-channel Trench MOSFET
10
ID
(A)
1
Limit RDSon = VDS/ID
017aaa003
tp = 10 µs
100 µs
101
102
101
DC 1 ms
10 ms
100 ms
1 10 102
VDS (V)
Fig 3.
Tsp = 25 °C; IDM = single pulse; VGS = 10 V
Safe operating area; junction to solder point; continuous and peak drain currents as a function of
drain-source voltage
10
ID
(A)
1
101
102
Limit RDSon = VDS/ID
DC
017aaa004
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
103
101
1
10 102
VDS (V)
Fig 4.
Tamb = 25 °C; IDM = single pulse; VGS = 10 V
Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - 350 500 K/W
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
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