2N6327 Datasheet PDF - SavantIC


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2N6327
SavantIC

Part Number 2N6327
Description (2N6326 -2N6328) Silicon Power Transistor
Page 3 Pages

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain
APPLICATIONS
·Designed for audio amplifier and
switching circuits applications
PINNING
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6326 2N6327 2N6328
F
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6326
VCBO
Collector-base voltage 2N6327
2N6328
2N6326
VCEO
Collector-emitter voltage 2N6327
2N6328
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
100
60
80
100
5
30
7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
0.875
UNIT
/W



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6326 2N6327 2N6328
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6326
2N6327 IC=0.2 A ;IB=0
2N6328
60
80
100
V
VCEsat Collector-emitter saturation voltage IC=15A; IB=1.5A
1.2 V
VBEsat
Base-emitter saturation voltage
IC=15A; IB=1.5A
1.5 V
VBE Base-emitter on voltage
IC=8A ; VCE=4V
2N6326
VCB=60V; IE=0
TC=150
ICBO
Collector cut-off current 2N6327
VCB=80V; IE=0
TC=150
2N6328
VCB=100V; IE=0
TC=150
IEBO Emitter cut-off current
VEB=4V; IC=0
1.5 V
1.0
5.0
1.0
5.0
mA
1.0
5.0
1.0 mA
hFE-1
DC current gain
IC=8A ; VCE=4V
25
hFE-2
DC current gain
IC=30A ; VCE=4V
6 30
fT Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
3
MHz
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6326 2N6327 2N6328
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3




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