2N6322 Datasheet PDF - SavantIC

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2N6322
SavantIC

Part Number 2N6322
Description Silicon Power Transistor
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6322
DESCRIPTION
·With TO-3 package
·High current and high power capability
·Low collector saturation voltage
APPLICATIONS
·For use in high current ,high
power applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
300
200
5
30
10
200
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.5
UNIT
/W



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SavantIC Semiconductor
Silicon NPN Power Transistors
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CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage IC=30mA ;IB=0
V(BR)CBO Collector-base breakdwon voltage
IC=2m A ;IE=0
V(BR)EBO Emitter-base breakdwon voltage
IE=2m A ;IC=0
VCEsat-1 Collector-emitter saturation voltage IC=20A ;IB=2A
VCEsat-2 Collector-emitter saturation voltage IC=30A; IB=6A
VBE Base-emitter on voltage
IC=30A ; VCE=5V
ICEO Collector cut-off current
VCE=100V; IB=0
ICES Collector cut-off current
VCE=300V; VBE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
hFE-3
DC current gain
IC=30A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Product Specification
2N6322
MIN TYP. MAX UNIT
200 V
300 V
5V
1.5 V
3.0 V
2.5 V
2.0 mA
20 µA
20 µA
40 150
12
6
10 MHz
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6322
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3



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