2N6270 Datasheet PDF - SavantIC

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2N6270
SavantIC

Part Number 2N6270
Description (2N6270 / 2N6271) Silicon Power Transistors
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6270 2N6271
DESCRIPTION
·With TO-3 package
·High current capability
·Wide safe operating area
APPLICATIONS
·Designed for audio amplifier and
switching circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6270
2N6271
VCEO
Collector-emitter voltage
2N6270
2N6271
VEBO
Emitter-base voltage
IC Collector current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
100
120
80
100
7
30
150
150
-65~200
UNIT
V
V
V
A
W
VALUE
0.875
UNIT
/W



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6270 2N6271
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6270
2N6271
IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=0.75A
VBEsat Base-emitter saturation voltage
IC=7.5A ;IB=0.75A
ICEO Collector cut-off current
VCE=1/2RatedVCE; IB=0
ICEV Collector cut-off current
VCE=RatedVCE; VBE(off)=1.5V
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=15A ; VCE=4V
fT Trainsistion frequency
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
80
V
100
1.0 V
1.3 V
5.0 mA
1.0 mA
1.0 mA
20 100
75 MHz
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N6270 2N6271
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3



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