2N60 Datasheet PDF - UTC

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2N60
UTC

Part Number 2N60
Description N-CHANNEL MOSFET
Page 8 Pages


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UNISONIC TECHNOLOGIES CO., LTD
2N60
2 Amps, 600 Volts
N-CHANNEL MOSFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 3.8@VGS = 10V.
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO - 252
1 TO-220
1 TO-220F
*Pb-free plating product number: 2N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
2N60-TA3-T
2N60L-TA3-T
TO-220
2N60-TF3-T
2N60L-TF3-T
TO-220F
2N60-TM3-T
2N60L-TM3-T
TO-251
2N60-TN3-R
2N60L-TN3-R
TO-252
2N60-TN3-T
2N60L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tube
2N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS
IAR
±30
2.0
V
A
Drain Current Continuous
TC = 25°C
TC = 100°C
ID
2.0 A
1.26 A
Drain Current Pulsed (Note 2)
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
Repetitive(Note 2)
Single Pulse(Note 3)
IDP
EAR
EAS
dv/dt
8.0 A
4.5 mJ
140 mJ
4.5 V/ns
Total Power Dissipation
TC = 25°C
Derate above 25°C
PD
45 W
0.36 W/
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
θJA
θJc
RATINGS
112
112
54
54
12
12
4
4
UNIT
/W
ELECTRICAL CHARACTERISTICS (TJ =25 , unless Otherwise specified.)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0V, ID = 250µA
IDSS
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
BVDSS/
TJ
ID = 250 µA
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID =1A
VDS = 50V, ID = 1A (Note 1)
CISS
COSS
CRSS
VDS =25V, VGS =0V, f =1MHz
MIN TYP MAX UNIT
600 V
10 µA
100 µA
100 nA
-100 nA
0.4 V/
2.0 4.0
3.8 5
2.25
V
S
270 350 pF
40 50 pF
5 7 pF
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www.unisonic.com.tw
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Switching Characteristics
Turn-On Delay Time
tD (ON)
Rise Time
Turn-Off Delay Time
tR VDD =300V, ID =2.4A, RG=25
tD(OFF) (Note 1,2)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, VGS=10V, ID=2.4A
(Note 1, 2)
QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS = 0 V, ISD = 2.4A,
QRR di/dt = 100 A/µs (Note1)
Note: 1. Pulse Test: Pulse Width 300µs, Duty Cycle2%
2. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
10 30 ns
25 60 ns
20 50 ns
25 60 ns
9.0 11 nC
1.6 nC
4.3 nC
1.4
2.0
8.0
180
0.72
V
A
A
ns
µC
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2N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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