2N5734 Datasheet PDF - SavantIC

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2N5734
SavantIC

Part Number 2N5734
Description Silicon NPN Power Transistors
Page 3 Pages


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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High current capability
APPLICATIONS
·For linear amplifier and inductive
switching applications
PINNING(see fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N5734
·
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Open base
Open collector
IC Collector current
ICM Collector current-peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
100
80
7
30
30
150
150
-65~200
UNIT
V
V
V
A
A
W
MAX
1.17
UNIT
/W



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=15 A;IB=1.5 A
VCEsat-2 Collector-emitter saturation voltage IC=30 A;IB=6 A
VBE Base-emitter on voltage
IC=15A ; VCE=2V
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=10A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=4V
fT Transition frequency
IC=1A ; VCE=10V
Product Specification
2N5734
MIN TYP. MAX UNIT
80 V
2.0 V
4.0 V
2.7 V
0.1 mA
0.1 mA
30 300
5
30 MHz
2



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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N5734
Fig.2 Outline dimensions
3



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