2N4126 Datasheet PDF - Motorola

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2N4126
Motorola

Part Number 2N4126
Description AMPLIFIER TRANSISTORS
Page 6 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
Order this document
by 2N4125/D
2N4125
2N4126
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4125 2N4126 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30 25
30 25
4.0
200
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N4125
2N4126
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
2N4125
2N4126
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
25
30
25
4.0
Max Unit
Vdc
Vdc
— Vdc
50 nAdc
50 nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1



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2N4125 2N4126
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4125
2N4126
hFE —
50 150
120 360
(IC = 50 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Noise Figure
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm,
f = 1.0 kHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
2N4125
2N4126
2N4125
2N4126
2N4125
2N4126
2N4125
2N4126
2N4125
2N4126
VCE(sat)
VBE(sat)
25
60
0.4 Vdc
0.95 Vdc
fT MHz
200 —
250 —
Cibo — 10 pF
Ccb — 4.5 pF
hfe —
50 200
120 480
|hfe|
2.0 —
2.5 —
NF dB
— 5.0
— 4.0
10
7.0
5.0 Cobo
Cibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
REVERSE BIAS (VOLTS)
10
Figure 1. Capacitance
20 30 50
200
ts
100
70 td
50 tr
30 tf
20
10.0
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
VBE(off) = 0.5 V
2.0 3.0 5.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 2. Switching Times
100 200
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



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2N4125 2N4126
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = – 5.0 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
W5.0
SOURCE RESISTANCE = 200
IC = –1 mA
4.0
WSOURCE RESISTANCE = 200
IC = – 0.5 mA
3.0
SOURCE RESISTANCE = 2 k
IC = – 50 mA
2.0
m1.0 SOURCE RESISTANCE = 2 k
IC = –100 A
12
f = 1 kHz
10
8.0
6.0
4.0
2.0
IC = 1 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40
f, FREQUENCY (kHz)
100
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
RS, SOURCE RESISTANCE (k)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25°C
300 100
70
200 50
30
100
70
50
30
0.1
0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain
5.0
10
20
10
7.0
5.0
0.1
0.2 0.5 1.0 2.0 5.0
IC, COLLECTOR CURRENT (mA)
Figure 6. Output Admittance
10
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Impedance
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 8. Voltage Feedback Ratio
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3



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2N4125 2N4126
2.0
1.0
0.7
0.5
0.3
0.2
STATIC CHARACTERISTICS
TJ = +125°C
+25°C
– 55°C
VCE = 1 V
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
20 30
50 70 100
200
1.0
0.8
IC = 1 mA
0.6
10 mA
30 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
1.0 2.0 5.0 10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
1.0
0.5 qVC for VCE(sat)
0
+25°C to +125°C
– 55°C to +25°C
–0.5
–1.0 qVS for VBE(sat)
–1.5
+25°C to +125°C
– 55°C to +25°C
–2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data



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