2MBI200HH-120-50 Datasheet PDF - Fuji Electric

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2MBI200HH-120-50
Fuji Electric

Part Number 2MBI200HH-120-50
Description High Speed IGBT Module
Page 6 Pages


2MBI200HH-120-50 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
2MBI200HH-120-50
IGBT Modules
HIGH SPEED IGBT MODULE
1200V / 200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Soft-switching Application
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector Power Dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-off time
Forward on voltage
Lead resistance, terminal-chip (*4)
Note *4: Biggest internal terminal resistance among arm.
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
toff
tf
VF
(terminal)
VF
(chip)
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
Tj=25°C
VGE = 15V
Tj=125°C
IC = 200A
Tj=25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V, IC = 200A
VGE = ±15V, RG = 1.6Ω
Ls = 20nH
Tj=25°C
VGE = 0V
Tj=125°C
IF = 75A
Tj=25°C
Tj=125°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact Thermal resistance (1 device) (*5)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Maximum ratings
1200
±20
300
200
600
400
75
150
1790
+150
-40 ~ +125
2500
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 2.0
- - 400
5.7 6.2 6.7
- 3.35 3.65
- 4.25 -
- 3.10 3.40
- 4.00 -
- 18 -
- 0.30 0.60
0.05 0.20
- 1.85 2.30
- 2.00 -
- 1.70 2.15
- 1.85 -
- 1.20 -
Units
mA
nA
V
V
nF
µs
V
Characteristics
min. typ. max.
- - 0.07
- - 0.46
- 0.025 -
Units
°C/W
1



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2MBI200HH-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
500
400
15V 12V
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
500
400
15V 12V
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
500
400 Tj=25ºC Tj=125ºC
300
200
100
0
01234567
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25ºC
100.0
Cies
10.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4 Ic=400A
Ic=200A
2 Ic=100A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj=25oC
VCE
VGE
Coes
1.0
Cres
0.1
0
10 20
Collector-Emitter voltage : VCE [ V ]
30
2
0
0
200 400
Gate charge : Qg [ nC ]
600



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2MBI200HH-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=25ºC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=125ºC
10000
1000
100
10
0
toff
tf
100 200 300
Collector current : Ic [ A ]
400
1000
100
10
0
toff
tf
100 200 300
Collector current : Ic [ A ]
400
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V,Tj=25ºC
10000
1000
100
toff
tf
10
0.1
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj=125ºC
20
Eoff
10
0
0.1
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
3
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω
20
15 Eoff(125ºC)
Eoff(25ºC)
10
5
0
0 50 100 150 200 250 300 350 400
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.6Ω, Tj <= 125ºC
500
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]



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2MBI200HH-120-50
Forward current vs. Forward on voltage (typ.)
chip
200
150 Tj=25ºC Tj=125ºC
100
50
0
0123
Forward on voltage : VF [ V ]
4
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1.000
0.100
0.010
Transient thermal resistance (max.)
FWD
IGBT
0.001
0.001
0.010
0.100
Pulse width : PW [ sec ]
1.000
4



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