2016 Datasheet PDF - Tuofeng Semiconductor

www.Datasheet-PDF.com

2016
Tuofeng Semiconductor

Part Number 2016
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


2016 datasheet pdf
Download PDF
2016 pdf
View PDF for Mobile

No Preview Available !

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50m(VGS = 4.5V)
RDS(ON) < 63m(VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
4.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W



No Preview Available !

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
Min Typ Max Units
20 V
1 µA
100 nA
0.4 0.6
1
V
15 A
41 50 m
52 63 m
gFS Forward Transconductance
VDS=5V, ID=4.2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=4.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=2.7,
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8
0.76
436
66
44
3
6.2
1.6
0.5
5.5
6.3
40
12.7
12.3
3.5
S
1.2 V
2A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005



No Preview Available !

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
8V
12
8
4.5V
3V
2.5V
10
8
2V
6
4
4
VGS=1.5V
2
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
0
VDS=5V
125°C
25°C
0.5 1 1.5 2
VGS(Volts)
Figure 2: Transfer Characteristics
2.5
100
80 VGS=1.8V
60 VGS=2.5V
40 VGS=4.5V
1.8
1.6
1.4 ID=4.2A
1.2
VGS=2.5
VGS=1.8V
VGS=4.5V
1
20
0 4 8 12
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
100
90
80 ID=4.2A
70
60 125°C
50
40 25°C
30
20
02468
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01
1E+00
1E-01
125°C
1E-02
1E-03
25°C
1E-04
1E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0



No Preview Available !

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=10V
4 ID=4.2A
800
600
3
400
2
200
1
Coss
Ciss
Crss
0
02468
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0 5 10 15 20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C
TA=25°C
100µs
10.0 RDS(ON)
limited
1ms 10µs
0.1s
1.0 10ms
1s
0.1
0.1
10s
DC
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
20
TJ(Max)=150°C
TA=25°C
15
10
5
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000



2016 datasheet pdf
Download PDF
2016 pdf
View PDF for Mobile


Related : Start with 201 Part Numbers by
2010 Double Sided Chip Resistor 2010
TT electronics
2010 pdf
2010DN FYP2010DN 2010DN
Fairchild Semiconductor
2010DN pdf
2012E Tuning Fork SMD Quartz Crystal 2012E
YIC
2012E pdf
2012ES Tuning Fork SMD Quartz Crystal 2012ES
YIC
2012ES pdf
2015 Single P-Channel Power MOSFET 2015
Tuofeng Semiconductor
2015 pdf
2015M MICROWAVEBIPOLAR 2015M
ETC
2015M pdf
2016 N-Channel Enhancement Mode Field Effect Transistor 2016
Tuofeng Semiconductor
2016 pdf
2016L030 Resettable PTC 2016L030
Littelfuse
2016L030 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact