2015 Datasheet PDF - Tuofeng Semiconductor


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2015
Tuofeng Semiconductor

Part Number 2015
Description Single P-Channel Power MOSFET
Page 7 Pages

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.081@ VGS=4.5V
0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product 2015 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
SOT-23
D
3
12
GS
Pin configuration (Top view)



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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Absolute Maximum ratings
2015
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-20
f8
-2.4 -2.2
-1.9 -1.7
0.9 0.8
0.5 0.5
-2.2 -2.0
-1.7 -1.6
0.7 0.6
0.5 0.4
-10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
105
120
130
145
60
Maximum
135
155
160
190
75
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.



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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Electronics Characteristics (Ta=25oC, unless otherwise noted)
2015
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c
RDS(on)
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = -250uA
VDS = -16V, VGS = 0V
VDS = 0 V, VGS = f8V
VGS = VDS, ID = -250uA
VGS = -4.5V, ID = -2.7A
VGS = -2.5V, ID = -2.2A
VGS = 0 V,
f = 1.0 MHz,
VDS = -10 V
VGS = -4.5 V,
VDS = -10 V,
ID = -2.7A
VGS = -4.5 V,
VDS = -10 V,
ID=-1.2A,
RG=6 Ÿ
VGS = 0 V, IS = -0.9A
Min Typ Max Unit
-20 V
-1 uA
 f100 nA
-0.40
-0.62
81
103
-0.81
110
150
V
mŸ
534
62 pF
54
7.3
0.5
1.25
nC
1.15
8.0
6.4
41.0
7.0
ns
-0.74 -1.5 V



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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Typical Characteristics (Ta=25oC, unless otherwise noted)
10
V =-4.5V
GS
V =-4V
GS
8 V =-3V
GS
5
V =-5V
DS
4
6
V =-2.5V
3
GS
2015
T=-50oC
T=25oC
T=125oC
42
V =-1.5V
GS
21
0
0.0 0.5 1.0 1.5 2.0
-V -Drain to Source Voltage(V)
DS
Output characteristics
0
0.0 0.4 0.8 1.2 1.6 2.0
-V -Gate to Source Voltage(V)
GS
Transfer characteristics
160
140
V =-1.8V
GS
120
100
V =-2.5V
GS
80 V =-4.5V
GS
60
40
12345
-I -Drain to Source Current(A)
DS
On-Resistance vs. Drain current
140
120
V =-4.5V,I =-2.7A
GS D
100
80
60
40
20
-50
0 50 100
Temperature(oC)
150
On-Resistance vs. Junction temperature
280
240
I =-2.7A
D
200
160
120
80
40
1.0
1.5 2.0 2.5 3.0 3.5 4.0
-V -Gate to Source Voltage(V)
GS
4.5
On-Resistance vs. Gate-to-Source voltage
1.0
I =-250uA
D
0.8
0.6
0.4
0.2
-50
0 50 100
Temperature(oC)
150
Threshold voltage vs. Temperature




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