2001FX Datasheet PDF - ST Microelectronics

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2001FX
ST Microelectronics

Part Number 2001FX
Description MD2001FX
Page 11 Pages


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MD2001FX
High voltage NPN power transistor for standard
definition CRT display
Features
State-of-the-art technology:
– Diffused collector “Enhanced generation”
Stable performances versus operating
temperature variation
Low base-drive requirements
Tight hFE range at operating collector current
Fully insulated power package U.L. compliant
Applications
Horizontal deflection output for monitor and
real flat TV
Description
The MD2001FX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
3
2
1
ISOWATT218FX
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
MD2001FX
MD2001FX
Package
ISOWATT218FX
Packaging
Tube
August 2007
Rev 2
1/11
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Content
Content
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MD2001FX
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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MD2001FX
1 Electrical ratings
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Electrical ratings
Table 2. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
PTOT
Vins
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc = 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _______________max
Value
1500
700
9
12
18
6
58
2500
-65 to 150
150
Value
2.15
Unit
V
V
V
A
A
A
W
V
°C
Unit
°C/W
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Electrical characteristics
2 Electrical characteristics
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MD2001FX
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 1500V
VCE = 1500V; TC= 125°C
0.2 mA
2 mA
IEBO
Emitter cut-off current
(IC =0)
VEB = 9V
1 mA
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IC =0)
IC = 100mA
700
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 6A
IB = 1.5A
1.8 V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 6A
IB = 1.5A
1.2 V
hFE (1) DC current gain
IC = 6A
IC = 6A
VCE = 1V
VCE = 5V 4.5
4.5
7
Inductive load
ts Storage time
tf Fall time
IC = 5A
IB(on) = 0.9A
VBE(off) = -2.7V fh = 64KHz
LBB(off) = 1.6µH
2.6
0.2
µs
µs
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
4/11



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