1M0680 Datasheet PDF - Fairchild

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1M0680
Fairchild

Part Number 1M0680
Description KA1M0680
Page 12 Pages


1M0680 datasheet pdf
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KA1M0680B/KA1M0680RB/
KA1H0680B/KA1H0680RFB
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency
• KA1M0680B,KA1M0680RB (67KHz)
• KA1H0680B,KA1H0680RFB (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Latch up mode (KA1M0680B,KA1H0680B)
• Auto restart (KA1M0680RB,KA1H0680RFB)
• Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
TO-3PF-5L
Internal Block Diagram
1
1
1.DRAIN 2.GND 3.VCC 4.FB 5.Soft Start
#3 VCC
#5 Soft Start
#4 FB
32V 5V Internal
Vref bias
Good
logic
5V
5µA
7.5V
25V
1mA 2.5R
9V 1R
+
OSC
+
S
Q
R
L.E.B
0.1V
+ Thermal S/D
OVER VOLTAGE S/D
S
Q
R
Power on reset
©2001 Fairchild Semiconductor Corporation
SFET
#1 DRAIN
#2 GND
Rev.1.0.2



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KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Absolute Maximum Ratings
Parameter
Maximum Drain voltage (1)
Drain Gate voltage (RGS=1M)
Gate source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Avalanche current (4)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Symbol
VD,MAX
VDGR
VGS
IDM
EAS
IAS
ID
ID
VCC,MAX
VFB
PD
Derating
Operating ambient temperature
Storage temperature
TA
TSTG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Value
800
800
±30
24.0
455
16
6.0
4.0
30
0.3 to VSD
150
1.21
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
A
ADC
ADC
V
V
W
W/°C
°C
°C
2



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KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain source breakdown voltage
Symbol
BVDSS
Zero gate voltage drain current
IDSS
Static drain source on resistance (note)
Forward transconductance (note)
Input capacitance
Output capacitance
RDS(ON)
gfs
Ciss
Coss
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Gate drain (Miller) charge
Qgd
Note:
Pulse test: Pulse width 300µS, duty cycle 2%
S = -1--
R
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=4.0A
VDS=15V, ID=4.0A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=6.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=6.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min.
800
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.6
2.5
1600
140
42
60
150
300
130
70
16
27
Max.
-
50
200
2.0
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
µA
S
pF
nS
nC
3



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KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
UVLO SECTION
Start threshold voltage
VSTART
-
14
Stop threshold voltage
VSTOP After turn on
9
OSCILLATOR SECTION
KA1M0680B
61
Initial accuracy
FOSC
KA1M0680RB
KA1H0680B
61
90
Frequency change with temperature (2) F/T
KA1H0680RFB
25°C Ta +85°C
90
-
KA1M0680B
74
Maximum duty cycle
Dmax
KA1M0680RB
KA1H0680B
74
64
KA1H0680RFB
64
FEEDBACK SECTION
Feedback source current
IFB Ta=25°C, 0V Vfb 3V 0.7
Shutdown Feedback voltage
VSD
- 6.9
Shutdown delay current
Idelay Ta=25°C, 5V Vfb VSD 4.0
SOFT START SECTION
Soft Start Voltage
VSS
VFB =2V
4.7
Soft Start Current
ISS Sync & S/S=GND
0.8
REFERENCE SECTION
Output voltage (1)
Temperature Stability (1)(2)
Vref
Vref/T
Ta=25°C
25°C Ta +85°C
4.80
-
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
IOVER Max. inductor current
3.52
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
TSD
- 140
Over voltage protection voltage
VOVP
- 23
TOTAL DEVICE SECTION
Start Up current
ISTART VCC=14V
0.1
Operating supply current
(control part only)
IOP Ta=25°C
6
VCC zener voltage
VZ ICC=20mA
30
Typ.
15
10
67
67
100
100
±5
77
77
67
67
0.9
7.5
5.0
5.0
1.0
5.00
0.3
4.00
160
25
0.3
12
32.5
Max. Unit
16 V
11 V
73
73
kHz
110
110
±10 %
80
80
%
70
70
1.1 mA
8.1 V
6.0 µA
5.3 V
1.2 mA
5.20 V
0.6 mV/°C
4.48 A
- °C
28 V
0.45 mA
18 mA
35 V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4



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