1M0565R Datasheet PDF - Fairchild Semiconductor

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1M0565R
Fairchild Semiconductor

Part Number 1M0565R
Description KA1M0565R
Page 10 Pages


1M0565R datasheet pdf
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KA1M0565R/KA1H0565R
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency
• KA1M0565R (67KHz),KA1H0565R (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto restart
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or RCC switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
Internal Block Diagram
1
1. GND 2. DRAIN 3. VCC 4. FB
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5µA
7.5V
25V
9V
1mA
2.5R
1R
+
OSC
+
S
Q
R
L.E.B
0.1V
+ Thermal S/D
OVER VOLTAGE S/D
S
Q
R
Power on reset
©2001 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
#1 GND
Rev.1.0.2



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KA1M0565R/KA1H0565R
Absolute Maximum Ratings
Parameter
Maximum Drain voltage (1)
Drain Gate voltage (RGS=1M)
Gate-source (GND) voltage
Drain current pulsed (2)
Single pulsed avalanche energy (3)
Continuous drain current (TC=25°C)
Continuous drain current (TC=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Symbol
VD,MAX
VDGR
VGS
IDM
EAS
ID
ID
VCC,MAX
VFB
PD
Derating
Operating ambient temperature
Storage temperature
TA
TSTG
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=30mH, VDD=50V, RG= 27, starting Tj=25°C
Value
650
650
±30
20
230
5.0
3.5
30
0.3 to VSD
140
1.11
25 to +85
55 to +150
Unit
V
V
V
ADC
mJ
ADC
ADC
V
V
W
W/°C
°C
°C
2



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KA1M0565R/KA1H0565R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain source breakdown voltage
Symbol
BVDSS
Zero gate voltage drain current
IDSS
Static drain source on resistance (note)
Forward transconductance (note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Note:
Pulse test: Pulse width 300µS, duty cycle 2%
S = -1--
R
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=2.5A
VDS=50V, ID=2.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=5.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=5.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.76
-
1457
130
38.8
-
-
-
-
-
10.3
22.3
Max.
-
50
200
2.2
-
-
-
-
60
150
300
130
56
-
-
Unit
V
µA
µA
S
pF
nS
nC
3



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KA1M0565R/KA1H0565R
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
UVLO SECTION
Start threshold voltage
VSTART - 14
Stop threshold voltage
VSTOP After turn on
9
OSCILLATOR SECTION
Initial accuracy
Frequency change with temperature (2)
FOSC
F/T
KA1M0565R
KA1H0565R
25°C Ta +85°C
61
90
-
Maximum duty cycle
Dmax
KA1M0565R
KA1H0565R
74
64
FEEDBACK SECTION
Feedback source current
IFB Ta=25°C, 0V Vfb 3V 0.7
Shutdown Feedback voltage
VSD
- 6.9
Shutdown delay current
Idelay Ta=25°C, 5V Vfb VSD 4.0
REFERENCE SECTION
Output voltage (1)
Temperature Stability (1)(2)
Vref
Vref/T
Ta=25°C
25°C Ta +85°C
4.80
-
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
IOVER Max. inductor current
3.08
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
TSD
- 140
Over voltage protection voltage
VOVP
- 23
TOTAL DEVICE SECTION
Start Up current
ISTART VCC=14V
0.1
Operating supply current
(control part only)
IOP Ta=25°C
6
VCC zener voltage
VZ ICC=20mA
30
Typ.
15
10
67
100
±5
77
67
0.9
7.5
5.0
5.00
0.3
3.5
160
25
0.3
12
32.5
Max. Unit
16 V
11 V
73
kHz
110
±10 %
80
%
70
1.1 mA
8.1 V
6.0 µA
5.20 V
0.6 mV/°C
3.92 A
- °C
28 V
0.4 mA
18 mA
35 V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4



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Fairchild Semiconductor
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