02N60P Datasheet PDF - ETC


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02N60P
ETC

Part Number 02N60P
Description SSM02N60P
Page 6 Pages

02N60P datasheet pdf
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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
Fast-switching
Simple drive requirement
Description
G
D
S
TO-220
The TO-220 package is widely preferred for commercial and industrial
applications. The SSM02N60P is well suited for DC/DC and AC/DC
converters in telecom, industrial and consumer applications.
BV DSS
RDS(ON)
ID
G
600V
8Ω
2A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 20
2
1.26
6
39
0.31
130
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
62
Unit
/W
/W
Rev.2.01 6/06/2003
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SSM02N60P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=20V, ID=1A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 20V
ID=2A
VDS=480V
VGS=10V
VDD=300V
ID=2A
RG=10Ω,VGS=10V
RD=150Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
600 - - V
- 0.6 - V/
- - 8Ω
2 - 4V
- 0.2 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 14 - nC
- 2 - nC
- 8.5 - nC
- 9.5 - ns
- 12 - ns
- 21 - ns
-9-
- 155 -
ns
pF
- 27 - pF
- 14 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=2A, VGS=0V
Min. Typ. Max. Units
- - 2A
- - 6A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=60mH , RG=25Ω , IAS=2A.
3.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/06/2003
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SSM02N60P
1.5
T C =25 o C
1
V G =10V
V G =6.0V
V G =5.5V
V G =5.0V
0.5
V G =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.8 T C =150 o C
0.6
0.4
0.2
V G =10V
V G =6.0V
V G =5.5V
V G =5.0V
V G =4.5V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS vs. Junction
Temperature
2.8
I D =1A
2.4 V G =10V
2
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Rev.2.01 6/06/2003
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SSM02N60P
2.4
2
1.6
1.2
0.8
0.4
0
25 50 75 100 125 150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Case Temperature
50
40
30
20
10
0
0 50 100 150
Tc, Case Temperature ( o C )
Fig 6. Typical Power Dissipation
10
1
0.1
0.01
1
T c =25 o C
Single Pulse
10
100
V DS (V)
10us
100us
1ms
10ms
100ms
1000
10000
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Rev.2.01 6/06/2003
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