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B - 109 Datasheets PDF Index
Manufacture | Part Number | Description | |
Seme LAB |
BFY84 | BFY84 MECHANICAL DATA Dimensions in mm (inches) 8 | |
SGS-ATES |
BFY84 | ||
Motorola |
BFY84 | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
Telefunken |
BFY85 | Telefunken Transistor BFY85 Datasheet Silicon N | |
Telefunken |
BFY86 | Telefunken Transistor BFY86 Datasheet Silicon N | |
Comset Semiconductors |
BFY90 | BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER DESC | |
Seme LAB |
BFY90 | BFY90 MECHANICAL DATA Dimensions in mm (inches) 4 | |
Microsemi Corporation |
BFY90 | 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 | |
STMicroelectronics |
BFY90 | This Material Copyrighted By Its Respective Manufa | |
Motorola |
BFY90 | BFX89 BFY90 MAXIMUM RATINGS Rating Collector-Emit | |
Central Semiconductor |
BFY90 | ||
Advanced Power Technology |
BFY90 | 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 | |
Power-One |
BG 3020-7 | ||
Power-One |
BG 3040-7 | ||
ETC |
BG-12864A-FBWA-J-G-B00 | SPECIFICATION FOR LCD MODULE MODULE NO.: BG-12864A | |
YEEBO |
BG-12864A-FBWB-J-G-B01 | YEEBO LCD Limited LCM Specialist SPECIFICATION FO | |
ETC |
BG-12864A-FDWA-J-G-B00 | SPECIFICATION FOR LCD MODULE MODULE NO: BG-12864A- | |
Bojie |
BG-536 | ||
STANLEY ELECTRIC |
BG1102W | Features Package Product features Dominant wavelen | |
BeRex |
BG11C | BG11C 50-4000 MHz Cascadable InGaP HBT Gain Block | |
Bolymin |
BG12232A | BO LYMIN BG12232A Feature 1. | |
Bolymin |
BG12232A1 | BO LYMIN BG12232A 1 Feature | |
Bolymin |
BG12232B | BO LYMIN BG12232B Feature 1. | |
Bolymin |
BG12232B1 | BO LYMIN BG12232B 1 Feature | |
Bolymin |
BG12232C | BO LYMIN BG12232C Feature 1. | |
Bolymin |
BG12232D | BO LYMIN BG12232D Feature 1. | |
Bolymin |
BG12232D1 | BO LYMIN BG12232D1 Feature 1 | |
Bolymin |
BG128128A | BO LYMIN BG128128A Feature 1 | |
Bolymin |
BG128128B | SPECIFICATIONS FOR LCD MODULE MODEL NO. BG128128B | |
Bolymin |
BG12832A | BO LYMIN BG12832A Feature 1. COB with Plastic fra | |
Bolymin |
BG12832B | SPECIFICATIONS FOR LCD MODULE MODEL NO. BG12832B | |
Bolymin |
BG12832C | ||
Bolymin |
BG12864A | SPECIFICATIONS FOR LCD MODULE MODEL NO. BG12864A s | |
Bolymin |
BG12864ABNHHn | SPECIFICATIONS FOR LCD MODULE MODEL NO. BG12864ABN | |
Bolymin |
BG12864B | BO LYMIN BG12864B Feature 1. | |
Bolymin |
BG12864C | BO LYMIN BG12864C Feature 1. | |
Bolymin |
BG12864C1 | BO LYMIN BG12864C 1 Feature | |
Bolymin |
BG12864D | BO LYMIN BG12864D Feature 1. | |
Bolymin |
BG12864E | LCD MODULE SPECIFICATION MODEL NO. BG12864E series | |
Bolymin |
BG12864EFPHHn | Bolymin, Inc. ◆◆◆ LCD MODULE SPECIFICATION | |
Bolymin |
BG12864F | LCD MODULE SPECIFICATION MODEL NO. BG12864F series | |
Bolymin |
BG12864G | ||
Bolymin |
BG12864H | BO LYMIN BG12864H Feature 1. | |
BeRex |
BG12B | BG12B 50-4000 MHz Cascadable InGaP HBT Gain Block | |
BeRex |
BG12C | BG12C 50-4000 MHz Cascadable InGaP HBT Gain Block | |
BeRex |
BG15A | BG15A 50-4000 MHz Cascadable InGaP HBT Gain Block | |
Bolymin |
BG160112A | ||
Bolymin |
BG160128A | BO LYMIN BG160128A Feature 1 | |
Bolymin |
BG160128B | BO LYMIN BG160128B Feature 1 | |
Bolymin |
BG160160A | BO LYMIN BG160160A Feature 1 | |
Bolymin |
BG160160B | BO LYMIN BG160160B Feature 1 | |
Bolymin |
BG160160C | BO LYMIN BG160160C Feature 1 | |
Bolymin |
BG16032A | BO LYMIN BG16032A Feature 1. | |
Bolymin |
BG16080A | BO LYMIN BG16080A Feature 1. | |
Bolymin |
BG16080B | BO LYMIN BG16080B Feature 1. | |
Bolymin |
BG16080E | ||
Bolymin |
BG16080G | ||
BeRex |
BG18B | BG18B 5-4000 MHz Cascadable InGaP HBT Gain Block | |
Bolymin |
BG192192A | ||
Bolymin |
BG19232A | ||
Bolymin |
BG19264A | BO LYMIN BG19264A Feature 1. | |
BYD Microelectronics |
BG200B12LY2R-I | BYD Microelectronics Co., Ltd. BG200B12LY2R-I IGB | |
Bolymin |
BG20232A | BO LYMIN BG20232A Feature 1. | |
Bolymin |
BG240128A | LCD MODULE SPECIFICATION MODEL NO. BG240128A serie | |
Bolymin |
BG240128B2 | LCD MODULE SPECIFICATION MODEL NO. BG240128B2YPLHn | |
Bolymin |
BG240128B2YPLH | LCD MODULE SPECIFICATION MODEL NO. BG240128B2YPLHn | |
Bolymin |
BG240128B3 | BO LYMIN BG240128B 3 Feature | |
Bolymin |
BG240128E | BO LYMIN BG240128E Feature 1 | |
Bolymin |
BG240128E1 | BO LYMIN BG240128E1 Feature | |
Bolymin |
BG24064A | Bolymin, Inc. ◆◆◆ LCD MODULE SPECIFICATION | |
Bolymin |
BG24064A20 | BO LYMIN BG24064A20 Feature | |
Bolymin |
BG24064B | BO LYMIN BG24064B Feature 1. | |
Bolymin |
BG24064C | BO LYMIN BG24064C Feature 1. | |
Bolymin |
BG24064D | BO LYMIN BG24064D Feature 1. SMT PCB with metal | |
Berg Microelectronics |
BG25Q40A | Berg Microelectronics Memory Series BG25Q40A Fea | |
Infineon Technologies AG |
BG3123 | BG3123... DUAL N-Channel MOSFET Tetrode 4 5 6 � | |
Infineon Technologies AG |
BG3123R | BG3123... DUAL N-Channel MOSFET Tetrode 4 5 6 � | |
Infineon Technologies AG |
BG3130 | DUAL N-Channel MOSFET Tetrode • Two gain control | |
Infineon Technologies AG |
BG3130R | DUAL N-Channel MOSFET Tetrode • Two gain control | |
BOUGH TECHNOLOGY |
BG314 | 博昊科技有限公司 BOUGH TECHNOLOGY COMPANY | |
Infineon Technologies AG |
BG3140 | BG3140... DUAL N-Channel MOSFET Tetrode 4 5 6 � | |
Infineon Technologies AG |
BG3140R | BG3140... DUAL N-Channel MOSFET Tetrode 4 5 6 � | |
Bolymin |
BG320240A | ˕̂˿̌̀˼́ʿʳ˜́˶ˁʳ ϬϬϬ LCD MODULE SP | |
Bolymin |
BG320240B | LCD MODULE SPECIFICATION MODEL NO. BG320240B serie | |
Bolymin |
BG320240C | ˕̂˿̌̀˼́ʿʳ˜́˶ˁʳ ϬϬϬ LCD MODULE SP | |
Bolymin |
BG320240D | ||
Bolymin |
BG320240F | ˕̂˿̌̀˼́ʿʳ˜́˶ˁʳ ϬϬϬ LCD MODULE SP | |
Bolymin |
BG320240F-87a | SPECIFICATIONS FOR LCD MODULE MODEL NO. BG320240F | |
Bolymin |
BG320240F2 | BO LYMIN BG320240F2 Feature 1. SMT PCB with metal | |
Bolymin |
BG320240G | ||
Infineon Technologies AG |
BG3230 | BG3230_BG3230R DUAL N-Channel MOSFET Tetrode 4 5 | |
Infineon Technologies AG |
BG3230R | BG3230_BG3230R DUAL N-Channel MOSFET Tetrode 4 5 | |
Sony |
BG3S | SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. M | |
Bolymin |
BG640480A | BO LYMIN BG640480A Feature 1 | |
Infineon |
BGA123L4 | BGA123L4 BGA123L4 Small Footprint Ultra Low Curre | |
NXP |
BGA2001 | DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA20 | |
NXP |
BGA2003 | DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA20 | |
NXP |
BGA2012 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2022 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2031 | DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA20 | |
NXP |
BGA2031-1 | DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpag | |
Infineon |
BGA231N7 | BGA231N7 Silicon Germanium GNSS Low Noise Amplifie | |
XTX |
BGA24 | BGA NAND PN27G02A BGA24 NAND Specification 2Gb ( | |
NXP |
BGA2709 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2711 | DISCRETE SEMICONDUCTORS DATA | |
NXP |
BGA2712 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2714 | BGA2714 MMIC wideband ampli� | |
NXP |
BGA2715 | BGA2715 MMIC wideband amplifier Rev. 02 — 24 Se | |
NXP |
BGA2716 | BGA2716 MMIC wideband ampli� | |
NXP |
BGA2717 | BGA2717 MMIC wideband amplifier Rev. 02 — 24 Se | |
NXP |
BGA2748 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2771 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2776 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGA2800 | BGA2800 MMIC wideband amplifier Rev. 5 — 13 July | |
NXP Semiconductors |
BGA2801 | BGA2801 MMIC wideband amplifier Rev. 5 — 13 July | |
NXP |
BGA2803 | BGA2803 MMIC wideband amplifier Rev. 5 — 13 July | |
NXP |
BGA2815 | BGA2815 MMIC wideband amplifier Rev. 5 — 29 May | |
NXP |
BGA2817 | BGA2817 MMIC wideband amplifier Rev. 7 — 30 Marc | |
NXP |
BGA2818 | BGA2818 MMIC wideband amplifier Rev. 7 — 30 Marc | |
NXP Semiconductors |
BGA2850 | BGA2850 MMIC wideband amplifier Rev. 5 — 13 July | |
NXP |
BGA2851 | BGA2851 MMIC wideband amplifier Rev. 3 — 13 July | |
NXP |
BGA2865 | BGA2865 MMIC wideband amplifier Rev. 4 — 13 July | |
NXP |
BGA2866 | BGA2866 MMIC wideband amplifier Rev. 4 — 13 July | |
NXP |
BGA2867 | BGA2867 MMIC wideband amplifier Rev. 5 — 3 Octob | |
NXP |
BGA2869 | BGA2869 MMIC wideband amplifier Rev. 3 — 10 July | |
NXP Semiconductors |
BGA2870 | BGA2870 MMIC wideband amplifier Rev. 3 — 13 July | |
NXP |
BGA2874 | BGA2874 MMIC wideband amplifier Rev. 3 — 3 Octob | |
NXP Semiconductors |
BGA3012 | SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifi | |
NXP |
BGA3015 | SOT89 BGA3015 1 GHz 15 dB gain wideband amplifier | |
NXP |
BGA3018 | SOT89 BGA3018 1 GHz 18 dB gain wideband amplifier | |
NXP |
BGA3021 | +62 BGA3021 1.2 GHz 16 dB gain CATV amplifier Re | |
NXP |
BGA3022 | +62 BGA3022 1.2 GHz 18 dB gain CATV amplifier Re | |
NXP |
BGA3023 | +62 BGA3023 1.2 GHz 20 dB gain CATV amplifier Re | |
Siemens Semiconductor Group |
BGA310 | BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary | |
Siemens Semiconductor Group |
BGA312 | BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary | |
Siemens Semiconductor Group |
BGA318 | BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary | |
Infineon Technologies AG |
BGA416 | Data sheet, BGA416, June 2002 BGA 416 R F C a s c | |
Siemens Semiconductor Group |
BGA420 | BGA 420 Si-MMIC-Amplifier in SIEGET® 25-Technolog | |
Infineon Technologies AG |
BGA420 | BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie | |
Siemens Semiconductor Group |
BGA425 | BGA 425 Si-MMIC-Amplifier Preliminary data • Mul | |
Siemens Semiconductor Group |
BGA427 | BGA 427 Si-MMIC-Amplifier in SIEGET® 25-Technolog | |
Infineon Technologies AG |
BGA427 | BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie | |
Infineon Technologies AG |
BGA428 | B G A 4 2 8 , M a rc h 2 0 0 2 BGA 428 BGA428 Hig | |
Infineon Technologies AG |
BGA430 | Preliminary Preliminary data sheet, BGA430, May 2 | |
Infineon |
BGA524N6 | BGA524N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA5L1BN6 | BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Ampl | |
Infineon |
BGA5M1BN6 | BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Ampl | |
Infineon Technologies AG |
BGA612 | Data sheet, BGA612, Nov. 2003 BGA 612 Silicon Ger | |
Infineon Technologies AG |
BGA614 | Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Ge | |
Infineon Technologies AG |
BGA616 | Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Ge | |
Infineon Technologies AG |
BGA619 | Application Note No. 081 Discrete Semiconductors | |
Infineon Technologies AG |
BGA622 | Silicon Discretes The BGA622 Silicon-Germanium Un | |
Infineon Technologies AG |
BGA622GPS | %*$ *36 6LOLFRQ 'LVFUHWHV *36 /RZ 1RLVH $PSOLI | |
Infineon |
BGA622L7 | Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon | |
NXP |
BGA6489 | BGA6489 MMIC wideband medium power amplifier Rev. | |
NXP |
BGA6589 | BGA6589 MMIC wideband medium power amplifier Rev. | |
NXP |
BGA7024 | BGA7024 400 MHz to 2700 MHz 0 | |
NXP Semiconductors |
BGA7027 | BGA7027 400 MHz to 2700 MHz 0.5 W high linearity | |
Infineon |
BGA711N7 | BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA D | |
NXP |
BGA7124 | BGA7124 400 MHz to 2700 MHz 0.25 W high linearity | |
NXP |
BGA7127 | BGA7127 400 MHz to 2700 MHz 0.5 W high linearity | |
NXP |
BGA7130 | HVSON8 BGA7130 400 MHz to 2700 MHz 1 W high line | |
Infineon |
BGA713N7 | BGA713N7 Single-Band UMTS LNA (700, 800 MHz) Data | |
Infineon |
BGA715N7 | BGA715N7 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA725L6 | BGA725L6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA728L7 | Data Sheet, Rev. 2.0, January 2009 BGA728L7 Broadb | |
Infineon |
BGA734L16 | BGA734L16 Low Power Tri-Band UMTS LNA (2100, 1900, | |
NXP |
BGA7351 | +94)1 BGA7351 50 MHz to 500 MHz high linearity | |
Infineon |
BGA735N16 | BGA735N16 High Linearity Tri-Band LTE/UMTS LNA (26 | |
Infineon |
BGA748L16 | BGA748L16 High Linearity Quad-Band UMTS LNA (2100, | |
Infineon |
BGA751N7 | BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA D | |
Infineon |
BGA758L7 | BGA758L7 5-6 GHz LNA for WLAN Data Sheet Revision | |
Infineon |
BGA777N7 | BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz) Da | |
Infineon |
BGA7H1N6 | BGA7H1N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA7L1N6 | BGA7L1N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA7M1N6 | BGA7M1N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA824N6 | BGA824N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA825L6S | BGA825L6S Silicon Germanium Low Noise Amplifier fo | |
Infineon |
BGA8U1BN6 | BGA8U1BN6 BGA8U1BN6 Low Noise Amplifier for Ultra | |
Infineon Technologies |
BGA915N7 | BGA915N7 Silicon Germanium GP | |
Infineon |
BGA924N6 | BGA924N6 Silicon Germanium Low Noise Amplifier for | |
Infineon |
BGA925L6 | BGA925L6 Silicon Germanium GNSS Low Noise Amplifie | |
NXP |
BGB100 | DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm | |
NXP |
BGB101 | ( DataSheet : ) DISCRETE SEMI | |
NXP |
BGB110 | ( DataSheet : ) DISCRETE SEMI | |
Philips |
BGB203 | BGB203 Bluetooth System-in-a- | |
Infineon Technologies AG |
BGB420 | BGB420, Aug. 2001 BGB 420 Active Biased Transisto | |
Infineon Technologies AG |
BGB540 | Data sheet, BGB540, Sept. 2002 BGB540 Active Bias | |
Infineon Technologies AG |
BGB540 | Data sheet, BGB540, Sept. 2002 BGB540 Active Bias | |
Infineon Technologies AG |
BGB540LNA | %*% /1$ 6LOLFRQ 'LVFUHWHV %*% DV D *+] | |
Infineon |
BGB707L7ESD | BGB707L7ESD Wideband MMIC LNA with Integrated ESD | |
Infineon |
BGB717L7ESD | BGB717L7ESD Low Noise Amplifier MMIC for FM Radio | |
Infineon |
BGB719N7ESD | BGB719N7ESD Low Noise Amplifier MMIC for FM Radio | |
Infineon |
BGB741L7ESD | BGB741L7ESD Robust Low Noise Broadband RF Amplifie | |
Infineon Technologies |
BGC405 | BGC405 Self-Biased BFP405 l | |
Infineon Technologies |
BGC420 | BGC420 Self-Biased BFP420 l | |
NXP |
BGD104 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
BGD108 | DISCRETE SEMICONDUCTORS DATA SHEET BGD108 CATV a | |
NXP |
BGD502 | DISCRETE SEMICONDUCTORS DATA SHEET BGD502; BGD50 | |
NXP |
BGD504 | DISCRETE SEMICONDUCTORS DATA SHEET BGD502; BGD50 |
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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