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2 - 78 Datasheets PDF Index
Manufacture | Part Number | Description | |
Motorola |
2N711 | A, B2N711 I (GERMANIUM) CASE 22 (TO-lS) Collecto | |
Siliconix |
2N7116 | 2N7116 SERIES N-Channel Lateral DMOS Quad FETs The | |
Siliconix |
2N7117 | 2N7116 SERIES N-Channel Lateral DMOS Quad FETs The | |
Siliconix |
2N7118 | 2N7116 SERIES N-Channel Lateral DMOS Quad FETs The | |
Motorola |
2N711A | A, B2N711 I (GERMANIUM) CASE 22 (TO-lS) Collecto | |
Motorola |
2N711B | A, B2N711 I (GERMANIUM) CASE 22 (TO-lS) Collecto | |
SSDI |
2N7142 | 10 AMP PNP(continued) Sorted by IC, then VCEO Pa | |
SSDI |
2N7143 | 10 AMP PNP(continued) Sorted by IC, then VCEO Pa | |
Micro Electronics |
2N718 | ||
Motorola |
2N718 | 7182N (SILICON) 2N1420 NPN silicon annular Star t | |
Fairchild Semiconductor |
2N718A | ||
Microsemi Corporation |
2N718A | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qu | |
Motorola |
2N718A | 2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Colle | |
CDIL |
2N718A | Continental Device India Limited An ISO/TS 16949, | |
STMicroelectronics |
2N720A | 2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION Th | |
Microsemi |
2N720A | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Q | |
CDIL |
2N720A | Continental Device India Limited An ISO/TS 16949, | |
Motorola |
2N720A | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
Motorola |
2N721 | 1212N (SILICON) PNP silicon annular transistor fo | |
ETC |
2N7218 | 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7 | |
ETC |
2N7219 | 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7 | |
Seme LAB |
2N7219 | IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (i | |
Seme LAB |
2N722 | 2N722 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N722 | 2N722 (SILICON) (2N1132 JAN AVAILABLE) 2Nl132 2Nl1 | |
ETC |
2N7221 | 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7 | |
ETC |
2N7222 | 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7 | |
Seme LAB |
2N7224 | LAB MECHANICAL DATA Dimensions in mm (inches) 13.5 | |
TEMIC |
2N7224JANTX | TEMIC Siliconix 2N7224JANTX/JANTXV N-Channel En | |
TEMIC |
2N7224JANTXV | TEMIC Siliconix 2N7224JANTX/JANTXV N-Channel En | |
Microsemi Corporation |
2N7225 | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Sensitron |
2N7225 | SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET | |
TEMIC |
2N7225JANTX | TEMIC Siliconix 2N7225JANTX/JANTXV N-Channel En | |
TEMIC |
2N7225JANTXV | TEMIC Siliconix 2N7225JANTX/JANTXV N-Channel En | |
Microsemi Corporation |
2N7225U | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 0 | |
Seme LAB |
2N7225U1 | IRFN250 2N7225U1 MECHANICAL | |
Advanced Power Technology |
2N7227 | D TO-254 G S POWER MOS IV MAXIMUM RATINGS Symbol | |
TEMIC |
2N7227JANTX | TEMIC Siliconix 2N7227JANTX/JANTXV N-Channel En | |
TEMIC |
2N7227JANTXV | TEMIC Siliconix 2N7227JANTX/JANTXV N-Channel En | |
Advanced Power Technology |
2N7228 | D TO-254 G S POWER MOS IV MAXIMUM RATINGS Symbol | |
TEMIC |
2N7228JANTX | TEMIC Siliconix 2N7228JANTX/JANTXV N-Channel En | |
TEMIC |
2N7228JANTXV | TEMIC Siliconix 2N7228JANTX/JANTXV N-Channel En | |
Motorola |
2N726 | 2N726 (SILICON) 2N727 PNP SILICON ANNULAR TRANSIS | |
Motorola |
2N727 | 2N726 (SILICON) 2N727 PNP SILICON ANNULAR TRANSIS | |
Intersil Corporation |
2N7288D | S E M I C O N D U C T O R REGISTRATION PENDING Av | |
Intersil Corporation |
2N7288H | S E M I C O N D U C T O R REGISTRATION PENDING Av | |
Intersil Corporation |
2N7288R | S E M I C O N D U C T O R REGISTRATION PENDING Av | |
Motorola |
2N731 | 2N731 (SILICON) NPN silicon transistor designed p | |
Sames |
2N7336 | 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm | |
Motorola |
2N735 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Motorola |
2N736 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Microsemi Corporation |
2N7368 | TECHNICAL DATA NPN HIGH POWER | |
Microsemi Corporation |
2N7369 | TECHNICAL DATA PNP HIGH POWER | |
Microsemi |
2N7370 | TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON | |
Microsemi Corporation |
2N7371 | TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON T | |
Microsemi Corporation |
2N7372 | 7516 Central Industrial Drive Riviera Beach, Flori | |
Microsemi Corporation |
2N7373 | 7516 Central Industrial Drive Riviera Beach, Flori | |
SSDI |
2N7375 | Sorted by IC, then VCEO Part Number mIaCx (A) 2 | |
SSDI |
2N7377 | 5 AMP NPN (continued) Sorted by IC, then VCEO Par | |
Motorola |
2N739 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Motorola |
2N740 | 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annu | |
Intersil Corporation |
2N7400 | JANSR2N7400 8A, 200V, 0.440 O | |
Motorola |
2N741 | 41, A2N7 (GERMANIUM) CASE 22 (TO-IS) Collactor c | |
Motorola |
2N741A | 41, A2N7 (GERMANIUM) CASE 22 (TO-IS) Collactor c | |
ETC |
2N7424 | The documentation and process conversion measures | |
ETC |
2N7425 | The documentation and process conversion measures | |
ETC |
2N7426 | The documentation and process conversion measures | |
Motorola |
2N743 | 2N743 (SILICON) NPN silicon annular transistor de | |
Motorola |
2N744 | 2N744 (SILICON) CASE 22 (TO-18) Collector connect | |
International Rectifier |
2N7522 | Preliminary Data Sheet Repeti | |
Central |
2N753 | Small Signal Transistors TO-18 Case TYPE NO. DES | |
International Rectifier |
2N7581U2 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD | |
International Rectifier |
2N7588T3 | PD-96986A RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7590T3 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohm | |
International Rectifier |
2N7592T3 | PD-96925C RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7594T3 | PD-97193A RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7599T3 | PD-95837B RADIATION HARDENED POWER MOSFET THRU-HO | |
International Rectifier |
2N7604U2 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFAC | |
International Rectifier |
2N7609U8 | PD-97326A RADIATION HARDENED LOGIC LEVEL POWER MO | |
International Rectifier |
2N7612M1 | PD-97178 RADIATION HARDENED LOGIC LEVEL POWER MOS | |
International Rectifier |
2N7614M1 | PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOS | |
International Rectifier |
2N7617UC | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFAC | |
International Rectifier |
2N7621T2 | PD-94695H IRHLF770Z4 2N7621T2 RADIATION HARDENED | |
International Rectifier |
2N7627UC | PD-97574 2N7627UC IRHLUC7970Z4 RADIATION HARDENED | |
International Rectifier |
2N7632UC | PD-97268A 2N7632UC IRHLUC7670Z4 RADIATION HARDENE | |
GeneSiC |
2N7635-GA | 2N7635-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7636-GA | 2N7636-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7637-GA | 2N7637-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7638-GA | 2N7638-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7639-GA | 2N7639-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7639-GA | 2N7639-GA Normally – OFF Silicon Carbide Juncti | |
GeneSiC |
2N7640-GA | 2N7640-GA Normally – OFF Silicon Carbide Juncti | |
Inchange Semiconductor |
2N80 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Unisonic Technologies |
2N80 | UNISONIC TECHNOLOGIES CO., LTD 2N80 2A, 800V N-CHA | |
Unisonic Technologies |
2N80Z | UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary | |
Motorola |
2N827 | 2N827 (GERMANIUM) CASE 22 (TO.18) PNP germanium | |
Motorola |
2N828 | 2N828 (GERMANIUM) CASE 22 (TO·1S) Collector conn | |
Motorola |
2N828A | 2N828 (continued) ELECTRICAL CHARACTERISTICS (cont | |
Motorola |
2N829 | 2N828 (continued) ELECTRICAL CHARACTERISTICS (cont | |
New Jersey Semi-Conductor |
2N834 | Free Datasheet / | |
Motorola |
2N834 | 8342N (SILICON) 2N835 NPN silicon epitaxial transi | |
Motorola |
2N835 | 8342N (SILICON) 2N835 NPN silicon epitaxial transi | |
Motorola |
2N838 | 2N838 (GERMANIUM) "CASE 22 (TO·18) Collector con | |
Motorola |
2N840 | 2N840 (SILICON) 2N841 NPN silicon annular transis | |
Motorola |
2N841 | 2N840 (SILICON) 2N841 NPN silicon annular transis | |
Inchange Semiconductor |
2N85 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Central Semiconductor |
2N858 | www.Data | |
Central Semiconductor |
2N859 | www.Data | |
Central Semiconductor |
2N860 | www.Data | |
Central Semiconductor |
2N861 | www.Data | |
Central Semiconductor |
2N862 | www.Data | |
Central Semiconductor |
2N863 | www.Data | |
Central Semiconductor |
2N864 | www.Data | |
Central Semiconductor |
2N865 | www.Data | |
Seme LAB |
2N869 | 2N869 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Central Semiconductor |
2N869 | www.Data | |
Motorola |
2N869 | 2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collecto | |
NES |
2N869A | ||
Seme LAB |
2N869A | 2N869A Dimensions in mm (inches). 5.84 (0.230) 5. | |
Motorola |
2N869A | 2N869A 2N4453 JAN, JTX, JTXV AVAILABLE CASE 22-03, | |
Central Semiconductor |
2N869A | www.Data | |
Central Semiconductor Corp |
2N876 | SCRs (Silicon Controlled Rectifiers) Metal/Plastic | |
Central Semiconductor |
2N877 | SCRs (Silicon Controlled Rect | |
Digitron Semiconductors |
2N877 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N878 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N879 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N880 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N881 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N885 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N886 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N887 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N888 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Digitron Semiconductors |
2N889 | 2N877-2N881, 2N885-2N889 High-reliability discret | |
Inchange Semiconductor |
2N90 | INCHANGE Semiconductor isc N-Channel MOSFET Transi | |
Unisonic Technologies |
2N90 | UNISONIC TECHNOLOGIES CO., LTD 2N90 2A, 900V N-CHA | |
UTC |
2N90-FC | UNISONIC TECHNOLOGIES CO., LTD 2N90-FC Power MOS | |
New Jersey Semi-Conductor |
2N909 | ||
Motorola |
2N910 | 2N910 (SILICON) 2N911 NPN silicon annular transis | |
Motorola |
2N911 | 2N910 (SILICON) 2N911 NPN silicon annular transis | |
Telefunken |
2N914 | OEM: Telefunken 2N914 Datasheet www.semi | |
ETC |
2N914 | ||
Motorola |
2N914 | ||
Semelab |
2N915 | 2N915 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N915 | 2N915 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL P | |
Telefunken |
2N915 | OEM: Telefunken 2N915 Datasheet www.semi | |
Seme LAB |
2N916 | 2N916 Dimensions in mm (inch | |
Motorola |
2N916 | 2N916 MAXIMUM RATINGS Rating Collector-Emitter Vo | |
Seme LAB |
2N916CSM | 2N916CSM Dimensions in mm (i | |
Seme LAB |
2N916DCSM | 2N916DCSM Dimensions in mm ( | |
STMicroelectronics |
2N918 | 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DE | |
Semicoa Semiconductor |
2N918 | • JAN level (2N918J) • JANTX level (2N918JX) | |
Motorola |
2N918 | 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE | |
Microsemi |
2N918 | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA | |
Telefunken |
2N918 | OEM: Telefunken 2N918 Datasheet www.semi | |
Advanced Semiconductor |
2N918 | 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCR | |
Central Semiconductor |
2N918 | 2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r | |
CDIL |
2N918 | Continental Device India Limited An ISO/TS 16949, | |
Seme LAB |
2N918CSM | LAB MECHANICAL DATA Dimensions in mm (inches) SEM | |
Microsemi |
2N918UB | TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA | |
Seme LAB |
2N929 | 2N929 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N929 | 2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N9 | |
Motorola |
2N929A | 2N929, A (SILICON) 2N930, A 2N929JAN AVAILABLE 2N9 | |
Micro Electronics |
2N930 | ||
CDIL |
2N930 | Continental Device India Limited An ISO/TS 16949, | |
Microsemi |
2N930 | TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Q | |
Seme LAB |
2N930 | 2N930 MECHANICAL DATA Dimensions in mm (inches) 5 | |
Central Semiconductor |
2N930 | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Motorola |
2N930 | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
CDIL |
2N930A | Continental Device India Limited An ISO/TS 16949, | |
Central Semiconductor |
2N930A | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (63 | |
Motorola |
2N930A | MAXIMUM RATINGS Rating Collector-Emitter Voltage C | |
Seme LAB |
2N930CSM | LAB MECHANICAL DATA Dimensions in mm (inches) SEM | |
Motorola |
2N956 | 2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Colle | |
Motorola |
2N960 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N961 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N962 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N963 | 2N960 SERIES (continued) ELECTRICAL CHARACTERISTIC | |
Motorola |
2N964 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N964A | 2N964 (GERMANIUM) For Specifications, See 2N960 Da | |
Motorola |
2N965 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N966 | 2N956 For Specifications, See 2N718A Data. 2N960 | |
Motorola |
2N967 | 2N960 SERIES (continued) ELECTRICAL CHARACTERISTIC | |
Motorola |
2N968 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N969 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N970 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N971 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N972 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N973 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N974 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N975 | 2N965 (GERMANIUM) 2N966 For Specifications, See | |
Motorola |
2N978 | 2N978 (SILICON) PNP SILICON ANNULAR TRANSISTOR de | |
Motorola |
2N985 | 2N985 (GERMANIUM) CAU22 (TO-lS) Collector connect | |
Seme LAB |
2N995 | 2N995 Dimensions in mm (inches). 5.84 (0.230) 5.3 | |
Motorola |
2N995 | 2N869 (SILICON) 2N995 CASE 22 (TO· IS) Collecto | |
Motorola |
2N996 | 2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · | |
Motorola |
2N998 | 2N998 (SILICON) Darlington amplifier containing t | |
Motorola |
2N998 | 2N998 CASE 20-03, STYLE 8 T072 (TO206AF) DARLINGT | |
INCHANGE |
2NC5566 | isc Silicon NPN Power Transistor DESCRIPTION ·Hi | |
Toshiba Semiconductor |
2NH45 | ||
STMicroelectronics |
2NK100Z | STD2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ | |
STMicroelectronics |
2NK90Z | STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-CHANNEL 900V - |
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