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1 - 190 Datasheets PDF Index
Manufacture | Part Number | Description | |
Microsemi |
1PMT5952B | 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480 | |
Microsemi |
1PMT5953B | 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480 | |
Microsemi |
1PMT5954B | 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480 | |
Microsemi |
1PMT5955B | 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480 | |
Microsemi |
1PMT5956B | 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480 | |
ON Semiconductor |
1PMT7.0AT1 | 1PMT5.0AT1/T3 Series Zener Transient Voltage Supp | |
ON Semiconductor |
1PMT7.0AT3 | 1PMT5.0AT1/T3 Series Zener Transient Voltage Supp | |
Tesla |
1PP75 | Free Datasheet / | |
NXP |
1PS10SB82 | 1PS10SB82 Schottky barrier diode 13 November 2019 | |
NXP |
1PS181 | DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage | |
NXP |
1PS184 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS193 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS226 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS300 | SOT323 1PS300 Dual high-speed switching diode Rev | |
NXP |
1PS301 | SOT323 1PS301 Dual high-speed switching diode Rev | |
NXP |
1PS302 | SOT323 1PS302 Dual high-speed switching diode Rev | |
nexperia |
1PS302 | 1PS302 Dual high-speed switching diode Rev. 6 — | |
NXP |
1PS59SB10 | DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage | |
NXP |
1PS59SB14 | DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage | |
NXP |
1PS59SB15 | DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage | |
NXP |
1PS59SB16 | DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage | |
NXP |
1PS59SB20 | DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1 | |
NXP |
1PS59SB21 | DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1 | |
NXP |
1PS66SB17 | 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode | |
nexperia |
1PS66SB82 | 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky | |
NXP |
1PS66SB82 | 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky | |
NXP |
1PS70SB10 | 1PS70SB10 Schottky barrier single diode 17 Decembe | |
NXP |
1PS70SB14 | 1PS70SB14 Dual Schottky barrier diode 17 December | |
NXP |
1PS70SB15 | 1PS70SB15 Dual Schottky barrier diode 17 December | |
NXP |
1PS70SB16 | 1PS70SB16 Dual Schottky barrier diode 17 December | |
NXP |
1PS70SB20 | 1PS70SB20 Schottky barrier single diode 17 Decembe | |
NXP |
1PS70SB40 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS70SB40 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS70SB44 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS70SB44 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS70SB45 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS70SB45 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS70SB46 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS70SB46 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS70SB82 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS70SB84 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS70SB85 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS70SB86 | DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage | |
NXP |
1PS74SB23 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
NXP |
1PS74SB43 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
NXP |
1PS75SB45 | DISCRETE SEMICONDUCTORS DATA SHEET M3D173 1PS75 | |
nexperia |
1PS75SB45 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS76SB10 | 1PS76SB10 Schottky barrier single diode 17 Decembe | |
NXP |
1PS76SB17 | 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode | |
NXP |
1PS76SB21 | 1PS76SB21; BAT721 series Schottky barrier diodes | |
nexperia |
1PS76SB21 | 1PS76SB21; BAT721 series Schottky barrier diodes | |
NXP |
1PS76SB40 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS76SB40 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS76SB62 | DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage | |
NXP |
1PS76SB70 | BAS70 series; 1PS7xSB70 series General-purpose Sch | |
NXP |
1PS79SB10 | 1PS79SB10 Schottky barrier single diode 14 August | |
NXP |
1PS79SB17 | 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode | |
NXP |
1PS79SB30 | 1PS79SB30 Schottky barrier single diode 24 July 20 | |
nexperia |
1PS79SB30 | 1PS79SB30 40 V, 0.2 A Schottky barrier diode 1 Jan | |
NXP |
1PS79SB31 | DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79 | |
nexperia |
1PS79SB31-Q | 1PS79SB31-Q Schottky barrier diode 2 June 2022 Pr | |
NXP |
1PS79SB40 | DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79 | |
nexperia |
1PS79SB40 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS79SB62 | DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79 | |
NXP |
1PS79SB70 | BAS70 series; 1PS7xSB70 series General-purpose Sch | |
nexperia |
1PS79SB70 | 1PS79SB70 General-purpose Schottky diode 19 Januar | |
NXP |
1PS88SB48 | DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage | |
nexperia |
1PS88SB48 | BAS40 series; 1PSxxSB4x series General-purpose Sch | |
NXP |
1PS88SB82 | 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky | |
nexperia |
1PS88SB82 | 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky | |
NXP |
1PS89SB14 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SB15 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SB16 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SB74 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SS04 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SS05 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
NXP |
1PS89SS06 | DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89 | |
nELL |
1PT | SEMICONDUCTOR 1PT Series RRooHHSS Sensitive gate | |
Toshiba Semiconductor |
1Q4B42 | ||
TUNG-SOL |
1Q5G | ||
TUNG-SOL |
1Q5GT | ||
TUNG-SOL |
1R5 | ||
Toshiba Semiconductor |
1R5BZ41 | 1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused | |
Toshiba Semiconductor |
1R5DL41A | 1R5DL41A TOSHIBA High Efficiency Rectifier (HED) S | |
Toshiba Semiconductor |
1R5DU41 | ||
Toshiba Semiconductor |
1R5GH45 | 1R5GH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DI | |
Toshiba Semiconductor |
1R5GU41 | 1R5GU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILI | |
Gulf Semiconductor |
1R5GU41 | 1R5GU41 ULTRAFAST EFFICIENT GLASS PASSIVATED REC | |
TAYCHIPST |
1R5GU41 | SWITCHING TYPE POWER SUPPLY APPLICATION FEATURES D | |
Gulf Semiconductor |
1R5GU4G | 1R5GU4G ULTRAFAST EFFICIENT GLASS PASSIVATED REC | |
Toshiba Semiconductor |
1R5GZ41 | 1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused | |
Toshiba Semiconductor |
1R5JH45 | TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED T | |
EIC |
1R5JH45 | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
Toshiba Semiconductor |
1R5JU41 | TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1R5JU41 HI | |
EIC |
1R5JU41 | www.eicsemi.com TH97/2478 TH09/2479 IATF 011368 | |
Toshiba Semiconductor |
1R5JZ41 | 1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused | |
Toshiba Semiconductor |
1R5NH41 | 1R5NH41 TOSHIBA FAST RECOVERY RECTIFIER SILICON DI | |
Toshiba Semiconductor |
1R5NH45 | 1R5NH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON D | |
Toshiba Semiconductor |
1R5NU41 | 1R5NU41 TOSHIBA SUPER FAST RECOVERY RECTIFIER SIL | |
Toshiba Semiconductor |
1R5NZ41 | 1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused | |
Pan Jit International Inc. |
1S10 | 1S2 THRU 1S10 1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
Yangzhou Yangjie |
1S100 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba | |
Eris |
1S100 | 1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. | |
Rectron Semiconductor |
1S100 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 | |
Hornby |
1S100 | 1S20 THRU 1S100 MINIATURE SCHOTTKY BARRIER RECTIF | |
Yangzhou Yangjie |
1S150 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba | |
Leshan Radio Company |
1S1553 | ||
Leshan Radio Company |
1S1555 | ||
Toshiba Semiconductor |
1S1585 | ||
Toshiba Semiconductor |
1S1586 | ||
Toshiba Semiconductor |
1S1587 | ||
Toshiba Semiconductor |
1S1588 | ||
Toshiba Semiconductor |
1S1829 | TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1S1829,1S1 | |
SUNMATE |
1S1829 | 1S1829 AXIAL LEADED SILICON RECTIFIER DIODES VOLT | |
Toshiba Semiconductor |
1S1830 | 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Sili | |
SUNMATE |
1S1830 | VOLTAGE RANGE: 1000V CURRENT: 1.0 A Features ! Dif | |
Toshiba Semiconductor |
1S1832 | TOSHIBA Rectifier Silicon Diffused Type 1S1832 Hig | |
Toshiba Semiconductor |
1S1834 | TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1 | |
Toshiba Semiconductor |
1S1834 | TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1 | |
BL |
1S1834 | BL FEATURES Low cost GALAXY | |
SUNMATE |
1S1834 | 1S1834 - 1S1835 FAST RECOVERY RECTIFIER DIODES VO | |
BL |
1S1834Z | BL FEATURES Low cost GALAXY | |
Toshiba Semiconductor |
1S1835 | TOSHIBA Rectifier Silicon Diffused Type 1S1834,1S1 | |
BL |
1S1835 | BL FEATURES Low cost GALAXY | |
SUNMATE |
1S1835 | 1S1834 - 1S1835 FAST RECOVERY RECTIFIER DIODES VO | |
BL |
1S1835Z | BL FEATURES Low cost GALAXY | |
EIC |
1S1885 | www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 V | |
Toshiba Semiconductor |
1S1885 | 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Sili | |
Toshiba Semiconductor |
1S1885A | 1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon | |
EIC |
1S1886 | www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 V | |
Toshiba Semiconductor |
1S1886 | TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1S1829,1S1 | |
Toshiba Semiconductor |
1S1886A | ||
EIC |
1S1887 | www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 V | |
Toshiba Semiconductor |
1S1887 | 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Sili | |
Toshiba Semiconductor |
1S1887A | 1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon | |
EIC |
1S1888 | www.eicsemi.com 1S1885 ~ 1S1888 PRV : 100 ~ 600 V | |
Toshiba Semiconductor |
1S1888 | 1S1830,1S1885,1S1887,1S1888 TOSHIBA Rectifier Sili | |
Toshiba Semiconductor |
1S1888A | 1S1885A,1S1887A,1S1888A TOSHIBA Rectifiers Silicon | |
GOOD-ARK |
1S1G | Features Low forward voltage drop High curre | |
Pan Jit International Inc. |
1S2 | 1S2 THRU 1S10 1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
Rectron Semiconductor |
1S20 | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S2 | |
Formosa MS |
1S20 | 1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S | |
Micro Commercial Components |
1S20 | MCC Features • • • • • | |
Yangzhou Yangjie |
1S20 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba | |
KD |
1S20 | 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse | |
EIC |
1S20 | Certificate TH97/10561QM Certificate TW00/17276EM | |
Eris |
1S20 | 1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. | |
Hornby |
1S20 | 1S20 THRU 1S100 MINIATURE SCHOTTKY BARRIER RECTIF | |
Yangzhou Yangjie |
1S200 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba | |
Hitachi Semiconductor |
1S2074 | 1S2074(H) Silicon Epitaxial Planar Diode for High | |
Hitachi Semiconductor |
1S2074H | 1S2074(H) Silicon Epitaxial Planar Diode for High | |
Hitachi Semiconductor |
1S2075 | 1S2075(K) Silicon Epitaxial Planar Diode for High | |
Hitachi Semiconductor |
1S2075K | 1S2075(K) Silicon Epitaxial Planar Diode for High | |
Hitachi Semiconductor |
1S2076 | 1S2076 Silicon Epitaxial Planar Diode for Various | |
Hitachi Semiconductor |
1S2076A | 1S2076A Silicon Epitaxial Planar Diode for Various | |
EIC |
1S2076A | 1S2076A PRV : 70 Volts Io : 150 mA FEATURES : * Si | |
Toshiba Semiconductor |
1S2093 | ||
Toshiba Semiconductor |
1S2094 | ||
Toshiba Semiconductor |
1S2236 | ||
Toshiba |
1S22x | w w a D . w S a t e e h U 4 t m o .c w w | |
Toshiba |
1S23x | w w a D . w S a t e e h U 4 t m o .c w w | |
Toshiba Semiconductor |
1S2460 | ||
Toshiba Semiconductor |
1S2461 | ||
Toshiba Semiconductor |
1S2462 | ||
Toshiba |
1S247 | w w a D . w S a t e e h U 4 t m o .c w w | |
Rohm |
1S2471 | ||
Rohm |
1S2472 | ||
Rohm |
1S2473 | ||
Toshiba |
1S24x | w w a D . w S a t e e h U 4 t m o .c w w | |
Toshiba |
1S25x | w w a D . w S a t e e h U 4 t m o .c w w | |
Toshiba |
1S260 | w w a D . w S a t e e h U 4 t m o .c w w | |
Toshiba |
1S261 | w w a D . w S a t e e h U 4 t m o .c w w | |
Semtech Corporation |
1S2638 | ||
Toshiba Semiconductor |
1S2711 | This Material Copyrighted By Its Respective Manufa | |
Rohm |
1S2787 | ||
Rohm |
1S2788 | ||
NEC |
1S2835 | Free Datasheet / Free D | |
NEC |
1S2836 | Free Datasheet / Free D | |
NEC |
1S2837 | Free Datasheet / Free D | |
NEC |
1S2838 | Free Datasheet / Free D | |
GOOD-ARK |
1S2G | Features Low forward voltage drop High curre | |
Gulf Semiconductor |
1S2G | 1S2G THRU 1S4G ULTRAFAST EFFICIENT GLASS PASSIVA | |
Pan Jit International Inc. |
1S3 | 1S2 THRU 1S10 1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
Micro Commercial Components |
1S30 | MCC Features • • • • • | |
Formosa MS |
1S30 | 1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S | |
Rectron Semiconductor |
1S30 | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S2 | |
Yangzhou Yangjie |
1S30 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba | |
EIC |
1S30 | Certificate TH97/10561QM Certificate TW00/17276EM | |
KD |
1S30 | 1S20 THRU 1S60 SCHOTTKY BARRIER RECTIFIER Reverse | |
Eris |
1S30 | 1S20 thru 1S100 .787 (20.0) MIN. .025 (0.6) DIA. | |
Hornby |
1S30 | 1S20 THRU 1S100 MINIATURE SCHOTTKY BARRIER RECTIF | |
MSI Electronics |
1S3150A | DataSheet 4 U .com | |
MSI Electronics |
1S31xxA | DataSheet 4 U .com | |
GOOD-ARK |
1S3G | Features Low forward voltage drop High curre | |
Pan Jit International Inc. |
1S4 | 1S2 THRU 1S10 1 AMPERE SCHOTTKY BARRIER RECTIFIERS | |
TUNG-SOL |
1S4 | ||
Micro Commercial Components |
1S40 | MCC Features • • • • • | |
Formosa MS |
1S40 | 1S20 1.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1S | |
Rectron Semiconductor |
1S40 | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1S2 | |
Yangzhou Yangjie |
1S40 | 1S20 THRU 1S200 RoHS COMPLIANT Schottky Ba |
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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